Spin Memory to Discuss Advancing IoT Edge Computing with MRAM at GSA Memory+ Conference and JEDEC’s Mobile & IOT Forums in Korea and Taiwan

FREMONT, Calif.–(BUSINESS WIRE)–Spin Memory, the leading developer of MRAM technologies and a
pre-eminent supplier of MRAM IP, will have Jeff Lewis, senior VP of
business development, and Dr. Mustafa Pinarbasi, CTO and SVP of
magnetics technology, both presenting and participating in panels at
JEDEC’s Mobile
& IOT Forum Korea
, the GSA
Memory+ Conference
, and JEDEC’s Mobile
& IOT Forum Taiwan
.

   

Mobile & IOT
Forum Korea:

At JEDEC’s Mobile & IOT Forum Korea, Mr. Lewis will present for the
“Enabling the Next Generation of IoT Edge Device Using MRAM”
session. For this presentation, Mr. Lewis will discuss MRAM’s
potential to improve devices at the edge, lowering power
consumption, and enhancing endurance, to enable new possibilities
for IoT devices at the edge.
 
WHEN: Tuesday, May 14, 2019 from 2:50-3:10 p.m. UTC+9
 

WHERE:

El
Tower Grace Hall

24 Yangjae-dong Seocho-gu
Seoul,
Korea

       
   

GSA Memory+
Conference:

At the GSA Memory+ Conference, Mr. Lewis will host a session as well
as participate in a panel during the event’s “Memory in Edge
Computing and IoT” discussion. As part of the session, Mr. Lewis
will talk about how MRAM is beginning to gain widespread adoption in
the semiconductor industry as a non-volatile, flash-like memory, and
will enable a new class of low-power edge computing applications
through enhancements to today’s SoCs for IoT devices.
 
WHEN: Wednesday, May 15, 2019 from 1:30-2:45 p.m. UTC+8
 

WHERE:

Mandarin
Oriental

111 Pudong S Rd, Pudong Xinqu

Shanghai, China 200120

       
   

Mobile & IOT
Forum Taiwan:

At JEDEC’s Mobile & IOT Forum Taiwan, Dr. Pinarbasi will present for
the “Enabling the Next Generation of IoT Edge Device Using MRAM”
session. Dr. Pinarbasi’s presentation will cover the technological
limitations that have been inhibiting massive deployment for IoT
devices, and how a new generation of enhanced MRAM will overcome
those issues and empower a new class of IoT Edge device.
 
WHEN: Thursday, May 16, 2019 from 2:30-2:50 p.m. UTC+8
 

WHERE:

National
Chiao Tung University

1001 University Road

Hsinchu, Taiwan 300, ROC

 

About Spin Memory
Spin Memory, Inc. (formerly Spin Transfer
Technologies, Inc.) is the pre-eminent MRAM IP supplier. Through
collaboration with industry leaders, Spin Memory is transforming the
semiconductor industry by solving memory challenges vital for AI, ADAS,
5G, IoT and more. Spin Memory’s disruptive STT-MRAM technologies and
products provide SRAM-like speed and endurance that can replace SRAM and
ultimately DRAM in both embedded and stand-alone applications. For more
information, please visit www.spinmemory.com.

Contacts

Justin Gillespie
The Hoffman Agency
(925) 719-1097

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